International Standard
ISO 5618-2:2024
Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 2: Method for determining etch pit density
Reference number
ISO 5618-2:2024
Edition 1
2024-04
International Standard
Read sample
ISO 5618-2:2024
83694
Published (Edition 1, 2024)

ISO 5618-2:2024

ISO 5618-2:2024
83694
Language
Format
CHF 129
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Abstract

This document describes a method for determining the etch pit density, which is used to detect dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films.

It is applicable to the defects specified in ISO 5618-1 from among the defects exposed on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate.

It is applicable to defects with an etch pit density of ≤ 7 × 107 cm-2.

General information

  •  : Published
     : 2024-04
    : International Standard published [60.60]
  •  : 1
     : 25
  • ISO/TC 206
    81.060.30 
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